| PART |
Description |
Maker |
| SB002-15SPA SB002-15CPA |
150V/ 20mA Rectifier
Shottky barrier diode, 150V/20mA rectifier
150V, 20mA Rectifier
Small signal(single type)
|
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| EDS-220-Z-LA-I EDS-260-Z-LA-I EDS-370-Z-LA-I EDS-2 |
POSITION, LINEAR SENSOR-INDUCTIVE, 220mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 260mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 370mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 250mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 300mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 100mm, 4-20mA, CYLINDRICAL
|
Micro-Epsilon Group
|
| LVP-100-ZA-2.5-SR7 LVP-50-GA-5-SA7 LVP-100-GA-5-SR |
POSITION, LINEAR SENSOR-DC, 100-100mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-DC, 50-50mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-DC, 200-200mm, 4-20mA, CYLINDRICAL
|
Micro-Epsilon Group
|
| SB002-15CP |
150V/ 20mA Rectifier
150V, 20mA Rectifier
Small signal(single type)
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| LT3009IDC-1.2-PBF LT3009IDC-1.2-TRPBF LT3009IDC-1. |
3楼矛A IQ, 20mA Low Dropout Linear Regulators
3渭A IQ, 20mA Low Dropout Linear Regulators
3μA IQ, 20mA Low Dropout Linear Regulators
|
Linear Technology
|
| E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| EA401 EA404 EA406 EA432 EA430 EA444GR EA444GY EA33 |
Red, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 12.5mcd. Typ. forward voltage at 20mA 2.0V.
Yellow, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.1V.
Green, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.2V.
Ultra bright green, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 60.0mcd. Typ. forward voltage at 20mA 2.2V.
Ultra bright red, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 300.0mcd. Typ. forward voltage at 20mA 1.85V.
Red & green, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(red), 32.0mcd(green). Typ. forward voltage at 20mA: 2.0V(red), 2.2V(green).
Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow).
Red, right angle, tri-level, T-1, LED. Lens diffused. Max.luminous intensity at 20mA 50mcd. Typ. forward voltage at 20mA 2.0V.
Orange side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V.
Green side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V.
Ultra bright red, right angle, T-1 LED. Lens translucent. Max.luminous intensity at 20mA 500mcd. Typ. forward voltage at 20mA 1.85V.
|
Gilway Technical Lamp
|
| MC3334005 MC33340D MC33340DG MC33340DR2 MC33340DR2 |
Battery Fast Charge Controllers 0.05 A BATTERY CHARGE CONTROLLER, 760 kHz SWITCHING FREQ-MAX, PDIP8
|
ONSEMI[ON Semiconductor]
|
| 2SA921 2SA09212SA921 2SA0921S 2SA921R |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 20mA的一（c）|2
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 20mA的一（c）|92
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TE Connectivity, Ltd.
Infineon Technologies AG
Matsshita / Panasonic
|
| ISO4-20MA-P |
Two wires 4-20mA Isolation Amplifier
|
Shenzhen Sunyuan
|
|
